ELECTRON-EMISSION FROM GATED SILICIDE FIELD EMITTER ARRAYS

Authors
TAKAI M IRIGUCHI T MORIMOTO H HOSONO A KAWABUCHI S
Citation
M. Takai et al., ELECTRON-EMISSION FROM GATED SILICIDE FIELD EMITTER ARRAYS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 790-792
Citations number
7
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
2
Year of publication
1998
Pages
790 - 792
Database
ISI
SICI code
1071-1023(1998)16:2<790:EFGSFE>2.0.ZU;2-G
Abstract
Silicidation of the top surface of Si tips with a Nb gate structure ha s been carried out to improve the emission behavior of Si field emitte r arrays (FEAs). A Pt layer with a thickness of 5-10 nm was deposited through the gate opening and annealed at 850 degrees C. The electron e mission was enhanced by a factor of 10 and the average emission per ti p was 3.5 mu A for a 10X 10 FEA. Fowler-Nordheim plots indicated the d ecrease in work function after silicidation. (C) 1998 American Vacuum Society. [S0734-211X(98)01702-8].