MICROFABRICATION AND CHARACTERIZATION OF GRIDDED POLYCRYSTALLINE SILICON FIELD EMITTER DEVICES

Authors
HUQ SE HUANG M WILSHAW PR PREWETT PD
Citation
Se. Huq et al., MICROFABRICATION AND CHARACTERIZATION OF GRIDDED POLYCRYSTALLINE SILICON FIELD EMITTER DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 796-798
Citations number
5
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
2
Year of publication
1998
Pages
796 - 798
Database
ISI
SICI code
1071-1023(1998)16:2<796:MACOGP>2.0.ZU;2-#
Abstract
Uniform arrays of sharp polysilicon held emitters have been fabricated in gridded configuration using state of the art microfabrication tech niques including high resolution electron beam lithography and plasma dry etching. Emission currents up to 2.5 mu A/tip have been obtained a t a 90 V grid-bias. Preliminary Lifetime measurements (14 h continuous operation) have been carried out under ultrahigh vacuum conditions. ( C) 1998 American Vacuum Society. [S0734-211X(98)04602-2].