RESONANT FOWLER-NORDHEIM TUNNELING EMISSION FROM METAL-OXIDE-SEMICONDUCTOR CATHODES

Citation
H. Mimura et al., RESONANT FOWLER-NORDHEIM TUNNELING EMISSION FROM METAL-OXIDE-SEMICONDUCTOR CATHODES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 803-806
Citations number
6
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
2
Year of publication
1998
Pages
803 - 806
Database
ISI
SICI code
1071-1023(1998)16:2<803:RFTEFM>2.0.ZU;2-V
Abstract
A metal-oxide-semiconductor tunneling cathode was fabricated with an u ltrathin oxide layer and an abrupt interface between the oxide layer a nd the polycrystalline Si gate electrode. The emission current shows p eriodic deviations on the Fowler-Nordheim plot estimated by the Wentze l-Kramers-Brillouin (WKB) approximation. The peaks in the oscillations are confirmed to arise from the resonant effect of electron tunneling by comparing the experimental results with the theoretical calculatio ns. This article describes the first experiment of resonant tunneling emission. (C) 1998 American Vacuum Society. [S0734-211X(98)02502-5].