FABRICATION OF GAN FIELD EMITTER ARRAYS BY SELECTIVE-AREA GROWTH TECHNIQUE

Selective area growth technique has been used to fabricate field emitt er arrays of GaN. Uniform micro-sized hexagonal pyramids of Si-doped G aN were obtained on dot-patterned GaN(0001)/sapphire substrates using metalorganic vapor phase epitaxy at atmospheric pressure, and the tip radius of the pyramids was less than 100 nm. Measurement of the emissi on was performed at the pressure of 10(-7) Pa range. The Fowler-Nordhe im plot obtained from current-voltage characteristics shows a linear r elationship, indicating that the emitted current is apparently due to field emission. (C) 1998 American Vacuum Society. [S0734-211X(98)08902 -1].