METAL-INSULATOR-SEMICONDUCTOR EMITTER WITH AN EPITAXIAL CAF2 LAYER ASTHE INSULATOR

Authors
MIYAMOTO Y YAMAGUCHI A OSHIMA K SAITOH W ASADA M
Citation
Y. Miyamoto et al., METAL-INSULATOR-SEMICONDUCTOR EMITTER WITH AN EPITAXIAL CAF2 LAYER ASTHE INSULATOR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 851-854
Citations number
10
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
2
Year of publication
1998
Pages
851 - 854
Database
ISI
SICI code
1071-1023(1998)16:2<851:MEWAEC>2.0.ZU;2-T
Abstract
An 8-nm-thick epitaxial CaF2 layer grown on an n(+)-Si substrate was u sed as the insulator in a metal-insulator-semiconductor cathode with a 10 mu m(2) emitter region. The fabricated cathodes exhibited two diff erent types of I-V characteristics. The first type showed conventional tunnel emission current of 22 pA at an emitter current of 2.4 mA and an emitter voltage of 7 V. The emitter with the other type of characte ristics showed an emission current of 5.6 nA at an emitter current of 2.2 mA and an emitter voltage of 4.5 V but it showed current instabili ty. (C) 1998 American Vacuum Society. [S0734-211X(98)03602-6].