INVESTIGATION OF CE-DOPED SILICATES FOR LOW-VOLTAGE FIELD-EMISSION DISPLAYS

Authors
LEE RY ZHANG FL PENCZEK J WAGNER BK YOCOM PN SUMMERS CJ
Citation
Ry. Lee et al., INVESTIGATION OF CE-DOPED SILICATES FOR LOW-VOLTAGE FIELD-EMISSION DISPLAYS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 855-857
Citations number
7
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
2
Year of publication
1998
Pages
855 - 857
Database
ISI
SICI code
1071-1023(1998)16:2<855:IOCSFL>2.0.ZU;2-B
Abstract
The feasibility of using Ce-doped silicates as an alternative to the P 22 blue phosphor (ZnS:Ag) was investigated for low voltage field emiss ion displays (FEDs). Silicates of various composition were evaluated b ased on their chromaticity, intrinsic efficiency, and brightness satur ation behavior. The influence of silicate composition and particle mor phology on the cathodoluminescence properties was also assessed. Satur ation measurements indicated that the high saturation resistance of th e Ce-doped samples can yield better performance than ZnS:Ag when opera ting at low voltages. The silicates are also attractive for their stab ility in a FED environment. (C) 1998 American Vacuum Society. [S0734-2 11X(98)06102-2].