SURFACE APPLICATION OF MOLYBDENUM SILICIDE ONTO GATED POLY-SI EMITTERS FOR ENHANCED FIELD-EMISSION PERFORMANCE

This article investigates the merits of molybdenum (Mo) silicide forma tion on gated polycrystalline silicon (poly-Si) held emitters. Metal s ilicides are promising materials for held emission cathode due to thei r high electrical and thermal conductivity and high-temperature stabil ity. In our experiment, Mo silicide was produced by direct metallurgic al reaction, that is, deposition of Mo and subsequent rapid thermal an nealing. The surface morphologies and field emission properties of Mo- silicided poly-Si (Mo-polycide) emitters have been examined and compar ed with those of pure poly-Si emitters. Field emission from these Mo-p olycide emitters exhibited significant enhancement compared with pure poly-Si emitters in both total emission current and stability. The rea son for this improved electron emission efficiency and stability could be explained by the smaller work function and better surface inertnes s of Mo-polycide emitters than those of poly-Si emitters. (C) 1998 Ame rican Vacuum Society. [S0734-211X(98)04802-1].