EMISSION CHARACTERISTICS OF TIN-COATED SILICON FIELD EMITTER ARRAYS

Authors
KANG SY LEE JH SONG YH KIM YT CHO KI YOO HJ
Citation
Sy. Kang et al., EMISSION CHARACTERISTICS OF TIN-COATED SILICON FIELD EMITTER ARRAYS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 871-874
Citations number
8
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
2
Year of publication
1998
Pages
871 - 874
Database
ISI
SICI code
1071-1023(1998)16:2<871:ECOTSF>2.0.ZU;2-2
Abstract
We observed the emission characteristics and stability of TiN-coated S i field emitter arrays (FEAs) with a TIW gate structure. The TiN layer on Si tips was formed by a two-step rapid thermal nitridation process in an NH3 ambient by which a Ti layer was thermally converted to a Ti N/TiSi2 bilayer. This process could suppress the formation of TiO2 on the surface and make the TiN layer thicker than a one-step process. By coating Si tips with TiN, the operating voltage of the TiN-coated Si FEAs was reduced by about 20 V compared with non-coated ones. Also, th e TiN-coated Si FEAs showed thermally stable electron emission compare d with non-coated ones. (C) 1998 American Vacuum Society. [S0734-211X( 98)08002-0].