TRANSIENT AND STATIONARY FIELD-EMISSION CURRENTS FROM SEMICONDUCTORS COMPUTED BY A SIMPLE SEMICLASSICAL METHOD

Authors
FILIP V NICOLAESCU D PLAVITU CN OKUYAMA F
Citation
V. Filip et al., TRANSIENT AND STATIONARY FIELD-EMISSION CURRENTS FROM SEMICONDUCTORS COMPUTED BY A SIMPLE SEMICLASSICAL METHOD, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 888-894
Citations number
14
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
2
Year of publication
1998
Pages
888 - 894
Database
ISI
SICI code
1071-1023(1998)16:2<888:TASFCF>2.0.ZU;2-0
Abstract
The transient emission current densities from flat band semiconductors and the stationary emission from graded electron affinity devices are computed by a combined semi-classical transport+ transmission coeffic ient method. A rapid sequence of sharp current overshoots can be obtai ned in the first case for a wide range of built-up speeds of the exter nal field. Their amplitudes and frequencies are field dependent and ca n be diminished by previous ''heating'' of the electronic system. In t he second case, low field saturation and temperature assisted emission enhancement were found as expected. Several practical conclusions are drawn. (C) 1998 American Vacuum Society. [S0734-211X(98)07102-9].