A NEW ANALYTICAL MODEL FOR THE AMORPHOUS-SILICON BULK BARRIER PHOTOTRANSISTOR

In this paper we present a new analytical model of the hydrogenated am orphous silicon bulk barrier photo-transistor. Taking into account opt ical and electrical behavior of this thin film device we obtain one si ngle equation which describes the current-voltage characteristics both in dark condition and under illumination. The model allows to point o ut the influence of structure parameters on device performance leading to formulation of mathematical relationships between physical quantit ies of interest. In particular the analytical model allowed to outligh t the importance of emitter doping. Basing on model results we realize d a device which showed a stable optical gain of 409 with a dynamic ra tio greater than 100 at 15 V bias voltage applied. (C) 1998 Elsevier S cience Ltd. All rights reserved.