A. Nascetti et F. Palma, A NEW ANALYTICAL MODEL FOR THE AMORPHOUS-SILICON BULK BARRIER PHOTOTRANSISTOR, Solid-state electronics, 42(3), 1998, pp. 339-348
In this paper we present a new analytical model of the hydrogenated am
orphous silicon bulk barrier photo-transistor. Taking into account opt
ical and electrical behavior of this thin film device we obtain one si
ngle equation which describes the current-voltage characteristics both
in dark condition and under illumination. The model allows to point o
ut the influence of structure parameters on device performance leading
to formulation of mathematical relationships between physical quantit
ies of interest. In particular the analytical model allowed to outligh
t the importance of emitter doping. Basing on model results we realize
d a device which showed a stable optical gain of 409 with a dynamic ra
tio greater than 100 at 15 V bias voltage applied. (C) 1998 Elsevier S
cience Ltd. All rights reserved.