APPLICATION OF THE PROPORTIONAL DIFFERENCE TIME ANALYSIS TO STUDY CARRIER GENERATION RATE IN MOS STRUCTURES

A modified Zerbst generation rate of the pulse response of silicon MOS structure is presented which takes into account the depletion width-d ependent surface generation and bulk diffusion components and is used to explain the experimentally observed generation rate nonlinearity du ring the final stages of the approach to equilibrium. An improved spec tral analysis method has been developed for separating and determining generation lifetime and surface generation velocity from measured eff ective generation parameters. Values of effective generation parameter s are shown to agree well with those obtained by the Zerbst-Heiman-Sch roder method. (C) 1998 Elsevier Science Ltd. All rights reserved.