NUMERICAL AND EXPERIMENTAL RESULTS FOR GAAS DIODES CONFIRMING THE 2 ROOTS MODEL

Numerical simulations have been made by a finite difference technique on the behaviour of GaAs pin diodes with doping densities in the range of 10(21)/m(3)-10(3)-10(25)/m(3). The simulated I-V characteristics o f these diodes show reasonable results for all doping densities, givin g an ideality factor m approximate to 1. The above results clearly man ifest systematically the effect of series resistance arising from the different doping densities. The simulated results confirm the Two Root s Model. In addition some experimental results on GaAs Schottky diodes do conform with the model as well. (C) 1998 Elsevier Science Ltd. All rights reserved.