Numerical simulations have been made by a finite difference technique
on the behaviour of GaAs pin diodes with doping densities in the range
of 10(21)/m(3)-10(3)-10(25)/m(3). The simulated I-V characteristics o
f these diodes show reasonable results for all doping densities, givin
g an ideality factor m approximate to 1. The above results clearly man
ifest systematically the effect of series resistance arising from the
different doping densities. The simulated results confirm the Two Root
s Model. In addition some experimental results on GaAs Schottky diodes
do conform with the model as well. (C) 1998 Elsevier Science Ltd. All
rights reserved.