ANALYSIS AND SUPPRESSION OF LATCH-UP DURING IGBT MODE OF DG-BRT OPERATION

The influence of P-base doping concentration on the saturation charact eristics of the dual gate BRT (DG-BRT) structure in the IGBT mode of o peration is analyzed in this paper by two dimensional simulation. The common base current gains (alpha(PNP) and alpha(NPN)) the inherent PNP and NPN transistors within the DG-BRT structure have been extracted a s a function of operating current density. Based upon these values, it is demonstrated that, by using P-base concentration of 5 x 10(18) cm( -3), the sum of the current gains (alpha(PNP) + alpha(NPN)) can be mad e less than unity in the IGBT mode of operation to suppress latch-up. This results in a significant enhancement of the forward biased safe o perating area. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.