PHYSICS-BASED ANALYTIC MODEL FOR C-V CHARACTERISTICS OF GAAS PLANAR SCHOTTKY DIODES

In this paper, we present a novel physics based analytic model for C-V characteristics of planar Schottky diodes made by a GaAs MESFET proce ss and used in GaAs MMIC. The model focuses on small dimensions, plana r technology and ion implantation technology, and attends to the influ ence of side-wall capacitance and channel series resistance beneath an ode on the C-V characteristics of planar Schottky diodes. Those influe nces affect the characteristics of planar Schottky diodes, but were om itted in other models or were paid little attention to. In the paper a calculation example using our model and a comparison between presente d model and some other models is given. The calculation result is in g ood agreement with the measured result, and reveals that the parameter s involved in the presented model are easy to be determined. (C) 1998 Elsevier Science Ltd. All rights reserved.