COMMENT ON A STUDY ON BARRIER HEIGHT IN AU-ALXGA1-XN SCHOTTKY DIODES IN THE RANGE -LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.2 - BY KHAN,M.R.H., NAKAYAMA,H., DETCHPROHM,T., HIRAMATSU,K. AND SAWAKI,N. IN SOLID-STATE ELECTRONICS, 1997 VOL 41, PG 287

Authors
MONCH W
Citation
W. Monch, COMMENT ON A STUDY ON BARRIER HEIGHT IN AU-ALXGA1-XN SCHOTTKY DIODES IN THE RANGE -LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.2 - BY KHAN,M.R.H., NAKAYAMA,H., DETCHPROHM,T., HIRAMATSU,K. AND SAWAKI,N. IN SOLID-STATE ELECTRONICS, 1997 VOL 41, PG 287, Solid-state electronics, 42(3), 1998, pp. 470-471
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
3
Year of publication
1998
Pages
470 - 471
Database
ISI
SICI code
0038-1101(1998)42:3<470:COASOB>2.0.ZU;2-S