IN-SITU REFLECTANCE MONITORING DURING MOCVD OF ALGAN

We report in-situ optical reflectance monitoring during the metalorgan ic chemical vapor deposition (MOCVD) growth of(AI)GaN. In addition to the well-known thin film interference effect which enables a real-time determination of growth rate, we show that several insights about the MOCVD growth process can be gained by using this simple yet powerful technique. Illustrations from a variety of applications for in-situ re flectance monitoring, specifically the study of growth evolution, the control of alloy fractions, and the use of growth rate to gauge surfac e kinetics and gas injection will be reported.