DOPANT-SELECTIVE PHOTOENHANCED WET ETCHING OF GAN

A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg are lamp illumina tion to achieve selective etching of n-type GaN with respect to intrin sic and p-type GaN. An intrinsic GaN etch-stop layer as well as the se lective undercutting of a buried n-type layer within a p-n GaN homostr ucture are demonstrated.