STUDY OF AVALANCHE BREAKDOWN AND IMPACT IONIZATION IN 4H SILICON-CARBIDE

Authors
KONSTANTINOV AO WAHAB Q NORDELL N LINDEFELT U
Citation
Ao. Konstantinov et al., STUDY OF AVALANCHE BREAKDOWN AND IMPACT IONIZATION IN 4H SILICON-CARBIDE, Journal of electronic materials, 27(4), 1998, pp. 335-341
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
27
Issue
4
Year of publication
1998
Pages
335 - 341
Database
ISI
SICI code
0361-5235(1998)27:4<335:SOABAI>2.0.ZU;2-A
Abstract
Epitaxial p-n diodes in 4H SiC are fabricated with uniform avalanche m ultiplication and breakdown. Photomultiplication measurements were per formed to determine electron and hole ionization rates. Theoretical va lues of critical fields and breakdown voltages in 4H SiC are calculate d using the ionization rates obtained. We discuss ionization mechanism s in 4H SiC and make a comparison between silicon carbide and gallium nitride.