GATE OXIDE RELIABILITIES IN MOS (METAL-OXIDE-SEMICONDUCTOR) STRUCTURES WITH TI-POLYCIDE GATES

Authors
KIM HS KO DH BAE DL LEE NI KIM DW KANG HK LEE MY
Citation
Hs. Kim et al., GATE OXIDE RELIABILITIES IN MOS (METAL-OXIDE-SEMICONDUCTOR) STRUCTURES WITH TI-POLYCIDE GATES, Journal of electronic materials, 27(4), 1998, pp. 21-25
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
27
Issue
4
Year of publication
1998
Pages
21 - 25
Database
ISI
SICI code
0361-5235(1998)27:4<21:GORIM(>2.0.ZU;2-V
Abstract
We have investigated the thermal degradation of gate oxide in metal-ox ide-semiconductor (MOS) structures with Ti-polycide gates. We found th at the Ti-diffusion into the underlying polysilicon and consequently t o the gate oxide occurs upon thermal cycling processes, which results in the dielectric breakdown of the gate oxide. We also found that the Ti-diffusion is suppressed by the employment of the thin (about 5 nm) titanium nitride (TiN) diffusion barrier layer, which consequently imp roved the reliability characteristics of gate oxide significantly.