MASK PATTERNING CHALLENGES FOR DEVICE FABRICATION BELOW 100 NM

Authors
Citation
M. Gesley, MASK PATTERNING CHALLENGES FOR DEVICE FABRICATION BELOW 100 NM, Microelectronic engineering, 42, 1998, pp. 7-14
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
42
Year of publication
1998
Pages
7 - 14
Database
ISI
SICI code
0167-9317(1998)42:<7:MPCFDF>2.0.ZU;2-J
Abstract
Mask pattern generation, pattern transfer processes, and inspection an d repair will be critical factors influencing progress in nanolithogra phy. By identifying the lithography trends driving mask-patterning iss ues, it is possible to define the future challenges the technology wil l be facing to enable semiconductor device fabrication at and below th e 100 nm device generation. This paper offers a roadmap of potential s olutions that would enable advanced mask technology. It also identifie s several topics accessible to universities and other organizations fo cused on precompetitive research, which are complementary to the aims of industrial development of semiconductor technology.