NEW APPROACH OF MONTE-CARLO SIMULATION FOR LOW-ENERGY-ELECTRON BEAM LITHOGRAPHY

A new Monte Carlo simulator for low energy electron beam lithography w as developed, which includes discrete energy loss models to represent secondary electron generation and straggling effects in energy loss. T he models are based on the Moller cross-section, the Vriens cross-sect ion, and the plasmon excitation for inelastic scattering. The results of the new simulator were compared with those of the conventional mode l based on the screened Rutherford cross-section and the Bethe equatio n. With the new simulator, straggling effects are shown and more energ y is deposited near the resist surface as compared to the conventional model. In addition, the simulated profiles are well matched with expe riments.