MECHANICAL MODELING OF ION-BEAM LITHOGRAPHY MASKS

Authors
FISHER A TEJEDA R SPRAGUE M ENGELSTAD R LOVELL E
Citation
A. Fisher et al., MECHANICAL MODELING OF ION-BEAM LITHOGRAPHY MASKS, Microelectronic engineering, 42, 1998, pp. 245-248
Citations number
8
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
42
Year of publication
1998
Pages
245 - 248
Database
ISI
SICI code
0167-9317(1998)42:<245:MMOILM>2.0.ZU;2-3
Abstract
The success of ion beam lithography in the sub-0.13 mu m technology re gion is partially dependent on the development of a low distortion mas k. To that end, finite element analyses have been performed to predict the distortions due to mounting of a stencil mask during exposure to the ion beam. In addition, modeling techniques which allow for the det ermination of in-plane distortions of specific pattern features during fabrication have been developed. Results can be used to perform Patte rn Specific Emulation (PSE).