HIGH-ENERGY IMPLANTATION BY ION PROJECTION

A new type of ion projector is proposed to structurize a wafer at a re solution below 200 nm reducing the typically used lithography steps to a large extent. Basically, this technique aims to project a mask onto a wafer using an ion optical lens system allowing a demagnification u p to 1:50 for ions with energies between 100 keV and some MeV. The cen ter piece of this device is a single magnetic lens consisting of a sup erconducting solenoid. The achievable lateral resolution depends on le ns errors, stability of the stencil mask and straggling of the implant ed ions. A variation of the implantation energy would allow three dime nsional structurization.