AN X-RAY-EXPOSURE SYSTEM FOR 100-NM-ORDER SR LITHOGRAPHY

Citation
H. Tsuyuzaki et al., AN X-RAY-EXPOSURE SYSTEM FOR 100-NM-ORDER SR LITHOGRAPHY, Microelectronic engineering, 42, 1998, pp. 263-266
Citations number
3
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
42
Year of publication
1998
Pages
263 - 266
Database
ISI
SICI code
0167-9317(1998)42:<263:AXSF1S>2.0.ZU;2-M
Abstract
An x-ray exposure system for 100-nm-order synchrotron radiation lithog raphy is now bring developed. We focused on improving the resolution, alignment accuracy, and beam-intensity uniformity. The key technologie s are a flat wafer chuck to enable the use of narrower gaps, high repe atability in positioning and alignment, and the use of vignetting plat es to obtain a uniform intensity. Currently, the resolution is less th an 120 nm, the alignment repeatability is less than 14 nm, the positio ning repeatability is less then 7 nm, and the intensity variation is l ess than +/-6%. This system has been installed in the SR facility at t he NTT Atsugi Research Center and is being used to conduct feasibility testing.