CHARACTERIZATION OF ACID DIFFUSION FOR A NEGATIVE CHEMICALLY AMPLIFIED RESIST USING X-RAY PROXIMITY LITHOGRAPHY

Authors
CHOI BK YANG JS LEE KH KIM O
Citation
Bk. Choi et al., CHARACTERIZATION OF ACID DIFFUSION FOR A NEGATIVE CHEMICALLY AMPLIFIED RESIST USING X-RAY PROXIMITY LITHOGRAPHY, Microelectronic engineering, 42, 1998, pp. 301-304
Citations number
4
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
42
Year of publication
1998
Pages
301 - 304
Database
ISI
SICI code
0167-9317(1998)42:<301:COADFA>2.0.ZU;2-J
Abstract
We suggest a new method to characterize the acid diffusion phenomena f or negative chemically amplified resist (CAR) using X-ray proximity li thography (XRL) in a straightforward manner. By measuring replicated c ritical dimensions of narrow isolated lines with various post exposure bake (PEB) times at certain FEB temperatures, we can calculate the di ffusivity of CAR. This method is applied to the measurement of the dif fusivity for TDUR - N908 CAR.