G. Arthur et al., ANALYZING THE DISSOLUTION CHARACTERISTICS OF DEEP UV CHEMICALLY AMPLIFIED PHOTORESIST, Microelectronic engineering, 42, 1998, pp. 311-314
The dissolution characteristics of poly(hydroxystyrene)-based, chemica
lly amplified (CA) photoresists for the deep uv are examined. It is sh
own that recently reported characteristics' found in DNQ/novolac-based
conventional resists are also present in PHS-based, CA resist, includ
ing the so-called development notch and the variation of dissolution c
haracteristics as a function of depth into resist film. Inclusion of t
hese anomalies into the development step of the optical lithography si
mulator, PROLITH/2(2), gives improved simulation accuracy. Simulation
of CA e-beam resists(3) which utilise the same chemistry should also b
enefit from the improvements described.