E. Tegou et al., SILYLATION OF EPOXY FUNCTIONALIZED PHOTORESISTS FOR OPTICAL, E-BEAM LITHOGRAPHY AND MICROMACHINING APPLICATIONS, Microelectronic engineering, 42, 1998, pp. 335-338
A near surface imaging process is developed for epoxy novolac photores
ists using wet silylation and oxygen plasma development. The process i
s also suitable for gas phase silylation. Dimethyl dichloro silane (DM
DCS) and chlorosilanes in general are used as silylating agents. The e
ffective silicon incorporation is determined by FT-IR and laser interf
erometry, Resist formulation is optimized for dry development, the par
ameters affecting the resist profile are adjusted and process developm
ent is done using deep ultra violet (DUV) contact printing.