SILYLATION OF EPOXY FUNCTIONALIZED PHOTORESISTS FOR OPTICAL, E-BEAM LITHOGRAPHY AND MICROMACHINING APPLICATIONS

Citation
E. Tegou et al., SILYLATION OF EPOXY FUNCTIONALIZED PHOTORESISTS FOR OPTICAL, E-BEAM LITHOGRAPHY AND MICROMACHINING APPLICATIONS, Microelectronic engineering, 42, 1998, pp. 335-338
Citations number
6
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
42
Year of publication
1998
Pages
335 - 338
Database
ISI
SICI code
0167-9317(1998)42:<335:SOEFPF>2.0.ZU;2-T
Abstract
A near surface imaging process is developed for epoxy novolac photores ists using wet silylation and oxygen plasma development. The process i s also suitable for gas phase silylation. Dimethyl dichloro silane (DM DCS) and chlorosilanes in general are used as silylating agents. The e ffective silicon incorporation is determined by FT-IR and laser interf erometry, Resist formulation is optimized for dry development, the par ameters affecting the resist profile are adjusted and process developm ent is done using deep ultra violet (DUV) contact printing.