Fe. Prins et al., SYSTEMATIC STUDIES OF FUNCTIONALIZED CALIXARENES AS NEGATIVE TONE ELECTRON-BEAM RESIST, Microelectronic engineering, 42, 1998, pp. 359-362
We present a systematic study on properties of calix[n]arenes as a hig
h resolution negative tone electron beam resist. From experiments chan
ging the ring sizes of the calix[:n]arenes with n=4,6,8 as well as the
functionalisation of the arenes we conclude that electron beam irradi
ation causes the arenes to break up and link to other arenes or functi
onalizing groups. This is confirmed by exposing resorcin[4]arene. We d
emonstrate that this material also shows negative tone high resolution
resist features, and patterns are transferred into silicon.