POST ETCH CLEANING OF LOW-K DIELECTRIC MATERIALS FOR ADVANCED INTERCONNECTS - CHARACTERIZATION AND PROCESS OPTIMIZATION

Authors
LOUIS D LAJOINIE E PIRES F LEE WM HOLMES D
Citation
D. Louis et al., POST ETCH CLEANING OF LOW-K DIELECTRIC MATERIALS FOR ADVANCED INTERCONNECTS - CHARACTERIZATION AND PROCESS OPTIMIZATION, Microelectronic engineering, 42, 1998, pp. 415-418
Citations number
4
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
42
Year of publication
1998
Pages
415 - 418
Database
ISI
SICI code
0167-9317(1998)42:<415:PECOLD>2.0.ZU;2-F
Abstract
The removal of photoresist and etch residues from an Interlayer Dielec tric sandwich incorporating a FOX (flowable oxide) low-k dielectric po lymer can be successfully achieved by implementing a process using H-2 /N-2 forming gas plasma in conjunction with Posistrip(R)EKC(R)LE. This cleaning procedure allows W filling to be carried out without delamin ation and via poisoning.