EFFECTS OF ANNEALING ON ELECTRON-CYCLOTRON-RESONANCE PLASMA-INDUCED DAMAGE IN GAAS GA0.5IN0.5P QUANTUM-WELL WIRES STRUCTURES/

We report a study of annealing of a plasma-induced damage in arrays of GaAs/Ga0.5In0.5P quantum well wires (QWW) etched using low-energy ele ctron cyclotron resonance (ECR) plasma in a mixture of methane/hydroge n/argon. Rapid thermal annealing of 100 nm wire arrays in a H-2/N-2 mi xture at temperature as low as 200 degrees C resulted in enhancement o f the photoluminescence (PL) signal by a factor of 30 compared to the as-etched structure. The PL measurements of the QWWs and a reference a rea suggest that passivation of the damage by hydrogen is responsible for the annealing effects.