MINIATURIZATION OF SI DIAPHRAGMS OBTAINED BY WAFER BONDING

Citation
D. Goustouridis et al., MINIATURIZATION OF SI DIAPHRAGMS OBTAINED BY WAFER BONDING, Microelectronic engineering, 42, 1998, pp. 437-440
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
42
Year of publication
1998
Pages
437 - 440
Database
ISI
SICI code
0167-9317(1998)42:<437:MOSDOB>2.0.ZU;2-0
Abstract
A technology is presented to fabricate ultraminiature capacitive type sensing elements for use in blood pressure measurements with each of t hem having a side dimension of only 130 mu m. The devices that were ma de in an array configuration were fabricated using the silicon fusion bonding technique and self-aligned boron ion implantation. The process is simple requiring only three mask levels and high yield. Results ar e presented for both static and dynamic pressure conditions.