FABRICATION OF FIELD EMITTER ARRAY USING FOCUSED ION AND ELECTRON-BEAM-INDUCED REACTION

Authors
TAKAI M KISHIMOTO T MORIMOTO H PARK YK LIPP S LEHRER C FREY L RYSSEL H HOSONO A KAWABUCHI S
Citation
M. Takai et al., FABRICATION OF FIELD EMITTER ARRAY USING FOCUSED ION AND ELECTRON-BEAM-INDUCED REACTION, Microelectronic engineering, 42, 1998, pp. 453-456
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
42
Year of publication
1998
Pages
453 - 456
Database
ISI
SICI code
0167-9317(1998)42:<453:FOFEAU>2.0.ZU;2-9
Abstract
A 30 keV dual beam system with focused ion and electron beams has been used to develop a fast fabrication process of field emitter arrays (F EAs). The gate opening was fabricated by reactive focused ion beam etc hing. Pt cathode tips were deposited through gate opening using electr on beam induced chemical reaction. Pt tips fabricated in the over-etch ed Si FEA showed field emission. A prototype of a nanometer-sized FEA was fabricated using a dual beam technique with FIB etching and electr on beam induced deposition.