MICRO-RAMAN CHARACTERIZATION OF STRESS-DISTRIBUTION WITHIN FREE STANDING MONOCRYSTALLINE AND POLYCRYSTALLINE SILICON MEMBRANES

Citation
M. Siakavellas et al., MICRO-RAMAN CHARACTERIZATION OF STRESS-DISTRIBUTION WITHIN FREE STANDING MONOCRYSTALLINE AND POLYCRYSTALLINE SILICON MEMBRANES, Microelectronic engineering, 42, 1998, pp. 469-472
Citations number
13
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
42
Year of publication
1998
Pages
469 - 472
Database
ISI
SICI code
0167-9317(1998)42:<469:MCOSWF>2.0.ZU;2-1
Abstract
Stress measurements were performed in a free standing monocrystalline cantilever and a polycrystalline silicon membrane suspended over a dee p cavity, using micro-Raman spectroscopy. These micromechanical struct ures were fabricated using porous silicon as a sacrificial layer. The results show that the stress varies across the membrane and the cantil ever, the level of stress in the latter being lower than in the membra ne.