SILICON SINGLE-ELECTRON MEMORY STRUCTURE

Authors
STONE NJ AHMED H
Citation
Nj. Stone et H. Ahmed, SILICON SINGLE-ELECTRON MEMORY STRUCTURE, Microelectronic engineering, 42, 1998, pp. 511-514
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
42
Year of publication
1998
Pages
511 - 514
Database
ISI
SICI code
0167-9317(1998)42:<511:SSMS>2.0.ZU;2-B
Abstract
A silicon single-electron memory showing clear hysteresis at 4.2K is d emonstrated. The memory structure consists of three integrated silicon nanowires. The capability of the memory to read, write and erase elec trons from the storage node is shown. The CMOS-compatible fabrication process allows for future integration of these devices with CMOS techn ology.