FABRICATION OF SI NANODEVICES BY OPTICAL LITHOGRAPHY AND ANISOTROPIC ETCHING

Authors
TSOUKALAS D NORMAND P AIDINIS C KAPETANAKIS E ARGITIS P
Citation
D. Tsoukalas et al., FABRICATION OF SI NANODEVICES BY OPTICAL LITHOGRAPHY AND ANISOTROPIC ETCHING, Microelectronic engineering, 42, 1998, pp. 523-526
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
42
Year of publication
1998
Pages
523 - 526
Database
ISI
SICI code
0167-9317(1998)42:<523:FOSNBO>2.0.ZU;2-V
Abstract
This paper investigates the fabrication of V-shaped grooves of submicr on dimensions in Silicon-On-Insulator (SOI) material by anisotropic we t etching. Such structures are examined in the context of the fabricat ion of a Single-Electron-Transistor which as we demonstrate can be for med in SOI by means and at resolutions afforded by optical lithography .