FABRICATION OF SI NANO-WIRES USING ANISOTROPIC DRY AND WET ETCHING

Authors
NORMAND P TSOUKALAS D AIDINIS C TSEREPI A KOUVATSOS D KAPETANAKIS E
Citation
P. Normand et al., FABRICATION OF SI NANO-WIRES USING ANISOTROPIC DRY AND WET ETCHING, Microelectronic engineering, 42, 1998, pp. 551-554
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
42
Year of publication
1998
Pages
551 - 554
Database
ISI
SICI code
0167-9317(1998)42:<551:FOSNUA>2.0.ZU;2-A
Abstract
A new process for the fabrication of silicon wires on SOI material usi ng anisotropic dry and wet etching is proposed. Arrays of silicon pads joined by narrow Si wires have een successfully fabricated. The struc tures are uniform and precisely controlled, thus demonstrating the rel iability of the process and its suitability for nanodevice application s.