A NEW TECHNOLOGY FOR METALLIC MULTILAYER SINGLE-ELECTRON TUNNELING DEVICES

Authors
WEIMANN T SCHERER H WOLF H KRUPENIN VA NIEMEYER J
Citation
T. Weimann et al., A NEW TECHNOLOGY FOR METALLIC MULTILAYER SINGLE-ELECTRON TUNNELING DEVICES, Microelectronic engineering, 42, 1998, pp. 559-562
Citations number
4
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
42
Year of publication
1998
Pages
559 - 562
Database
ISI
SICI code
0167-9317(1998)42:<559:ANTFMM>2.0.ZU;2-5
Abstract
A new technology for the fabrication of metallic single electron tunne ling (SET) transistors has been developed using different lithography steps for the preparation of the different layers. This offers the pos sibilty to use different materials and to avoid some disadvantages of the usual shadow evaporation method like unwanted shadows.