EFFECTS OF GROWTH INTERRUPTION IN IN-SITU PROCESS FOR BURIED QUANTUM STRUCTURES

In order to reduce the carrier depletion at the growth-interrupted int erface during the fabrication of buried quantum structures using the i n situ system which consists of the low-energy focused ion beam and th e molecular beam epitaxy, several methods are investigated. It is show n that the passivation using the As layer during the growth interrupti on is effective. It is also shown that the distance between the growth -interrupted interface and the delta-doped layer should be separated b y more than 10 nm. The level of the interface state at the growth-inte rrupted interface is discussed using the capacitance-voltage method. T he obtained results suggest that the interface state locates at shallo w level from the conduction band edge.