2-DIMENSIONAL CONFINEMENT EFFECTS IN GATE-ALL-AROUND (GAA) MOSFETS

Authors
BAIE X COLINGE JP
Citation
X. Baie et Jp. Colinge, 2-DIMENSIONAL CONFINEMENT EFFECTS IN GATE-ALL-AROUND (GAA) MOSFETS, Solid-state electronics, 42(4), 1998, pp. 499-504
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
4
Year of publication
1998
Pages
499 - 504
Database
ISI
SICI code
0038-1101(1998)42:4<499:2CEIG(>2.0.ZU;2-H
Abstract
Two-dimensional electron confinement effects have been modeled and exp erimentally observed in silicon-on-insulator (SOI) gate-all-around (GA A) MOSFETs. Solving the Poisson and Schrodinger equations in a self-co nsistent manner provides the electron wave functions and the energy le vels within the device channel. The variation of these energy levels, as well as the electron concentration profile, have been computed as a function of gate voltage. Transconductance fluctuations are observed as new energy levels become populated. (C) 1998 Elsevier Science Ltd. All rights reserved.