THE DUAL MOS-GATED THYRISTOR (DMGT) STRUCTURE

A new device concept, called the dual MOS-gated thyristor (DMGT), is p resented in this paper and analyzed with the aid of 2D numerical simul ations. The structure includes a vertical thyristor, a floating ohmic contact (FOC), and two N-channel MOSFETs (M1 and M2) which are control led by independent gates. It can be operated either in a thyristor mod e or in an IGBT regime, which provides the device a low on-state volta ge drop and a good forward biased safe operating area. When a positive bias is applied to the M1 gate, the structure operates in the thyrist or mode with a low on-state voltage drop. On the contrary, when a posi tive bias is applied to the M2 gate, the structure operates in the IGB T regime with the saturated current controlled by the positive voltage applied to the M1 gate. (C) 1998 Elsevier Science Ltd. All rights res erved.