REVERSE BLOCKING LATERAL MOS-GATED SWITCHES FOR AC POWER-CONTROL APPLICATIONS

Two new high voltage reverse blocking lateral device structures, calle d the lateral MOS gated thyristor (LMGT) and lateral IGBT with P+-dive rter (LIGBT-D), are presented. Both of these devices are designed to s upport high reverse voltage suitable for ac power control applications . These devices utilize thyristor current conduction controlled by MOS gate and realize MOS gate controlled switching and current saturation characteristics. The fabricated devices had a bidirectional blocking voltage capability of 600 V. Switching measurements yielded a turn-off time 3 and 5 mu s for the LMGT and LIGBT-D devices. (C) 1998 Elsevier Science Ltd. All rights reserved.