A NOVEL ANALYTICAL MODEL FOR SHORT-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

In this paper, we propose a novel analytical model for accurate and ef ficient simulation of integrated circuits with short channel heterostr ucture field effect transistors (HFETs). The proposed model for short channel HFETs is based on an analytical expression of the voltage-depe ndent two-dimensional electron gas density, which is either a linear o r logarithmic function of the Bate voltage. This compact model accurat ely describes the electrical characteristics of HFETs over the whole o peration range including linear, saturation, and subthreshold operatio n without any discontinuity, which is known to be a detrimental factor for accurate modeling and simulation of analog and digital integrated circuits with field effect transistors. This new compact model has be en verified with experimental data obtained from an Al0.3Ga0.7As/GaAs/ In0.13Ga0.87As double heterojunction pseudomorphic HFET with a gate le ngth L-g = 1 mu m. (C) 1998 Elsevier Science Ltd. All rights reserved.