BIASED PERCOLATION MODEL FOR THE ANALYSIS OF ELECTRONIC-DEVICE DEGRADATION

The biased percolation model is proposed for investigating device degr adation and failure associated with the generation of defects due to l ocal Joule heating. The degradation processes of a thin conducting or semiconducting film is monitored by a set of relevant indicators, such as: the evolution of damage pattern, the current distribution, the fi lm resistance and its fluctuations, the defect concentration, the film lifetime, etc. The conductor-insulator (CI) and conductor-superconduc tor (CS) like degradation processes are considered. The results can be used to propose non-destructive indicators to test the reliability of samples and to interpret the corresponding experiments. (C) 1998 Else vier Science Ltd. All rights reserved.