OHMIC CONTACTS FORMATION OF SILICON SCHOTTKY DIODES BY SCREEN PRINTING AND RAPID ISOTHERMAL PROCESSING

Rapid isothermal processing based on incoherent radiation as the sourc e of optical and thermal energy is playing a major role in flexible fa st-cycle time integrated circuits manufacturing. In this paper, are pr esent the dark and illuminated current-voltage characteristics of sili con Schottky barrier diodes where the ohmic contacts are formed by scr een printing and rapid isothermal annealing. These results are compare d with evaporated contacts followed by furnace annealing or rapid isot hermal annealing. In this paper, we have shown that the ohmic contacts formed by screen printing and rapid isothermal annealing are compatib le with the contacts formed by evaporation process. The processing tim e of the screen printed ohmic contacts is significantly lower than the contacts formed by evaporation process.