FORMATION OF INSB QUANTUM DOTS IN A GASB MATRIX

InSb nanoislands in a GaSb matrix have been fabricated and their struc tural and luminescence properties have been studied. The deposition of similar to 1.7 monolayers of InSb in a GaSb(100) matrix has been foun d by transmission electron microscopy to result in a 2D-3D growth mode transition and a formation of small InSb quantum dots (QDs) with late ral sizes of similar to 10 nm. Bright luminescence due to these QDs is observed. Stacking of the QDs results in a formation of vertical-coup led QD planes and leads to a long wavelength shift of photoluminescenc e line associated with the QDs. Increase in the InSb layer thickness a bove similar to 2 monolayers results in formation of 3D dislocated InS b islands with a lateral size above 60 nm and the dramatic drop of pho toluminescence intensity.