TE VAPOR-PRESSURE DEPENDENCE OF THE PN JUNCTION PROPERTIES OF PBTE LIQUID-PHASE EPITAXIAL LAYERS

Authors
NUGRAHA,"TAMURA W ITOH O SUTO K NISHIZAWA J
Citation
W. Nugraha,"tamura et al., TE VAPOR-PRESSURE DEPENDENCE OF THE PN JUNCTION PROPERTIES OF PBTE LIQUID-PHASE EPITAXIAL LAYERS, Journal of electronic materials, 27(5), 1998, pp. 438-441
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
27
Issue
5
Year of publication
1998
Pages
438 - 441
Database
ISI
SICI code
0361-5235(1998)27:5<438:TVDOTP>2.0.ZU;2-C
Abstract
The pn junction characteristics of the PbTe epitaxial layers grown on PbTe substrates are investigated. Both the substrate crystals and the epitaxial layers are grown under control Te vapor pressures. The ideal ity factors n of pn junctions decrease close to 1 in the temperature r egion from 40K to about 120K, but then increase with increasing temper ature. The increase of n is more pronounced for higher Te vapor pressu re. As a possible origin of the recombination current, deep levels wit h E-d = 0.09 eV are found from Hall measurements for pn junctions grow n under higher Te vapor pressure.