PHOTOELECTROCHEMICAL CAPACITANCE-VOLTAGE MEASUREMENTS IN GAN

Authors
STUTZ CE MACK M BREMSER MD NAM OH DAVIS RF LOOK DC
Citation
Ce. Stutz et al., PHOTOELECTROCHEMICAL CAPACITANCE-VOLTAGE MEASUREMENTS IN GAN, Journal of electronic materials, 27(5), 1998, pp. 26-28
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
27
Issue
5
Year of publication
1998
Pages
26 - 28
Database
ISI
SICI code
0361-5235(1998)27:5<26:PCMIG>2.0.ZU;2-T
Abstract
Photoelectrochemical etching of GaN, using a KOH solution and a 325 nm wavelength UV laser, has been used to obtain carrier concentration de pth profiles. The photoelectrochemical capacitance-voltage measurement s are supported with conventional depletion mode capacitance-voltage, secondary ion mass spectroscopy, and Hall measurements. The data show that steps in carrier concentration profiles can be accurately reprodu ced.