WET ETCHING OF (0001)GAN AL2O3 GROWN BY MOVPE

Authors
KIM BJ LEE JW PARK HS PARK Y KIM TI
Citation
Bj. Kim et al., WET ETCHING OF (0001)GAN AL2O3 GROWN BY MOVPE, Journal of electronic materials, 27(5), 1998, pp. 32-34
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
27
Issue
5
Year of publication
1998
Pages
32 - 34
Database
ISI
SICI code
0361-5235(1998)27:5<32:WEO(AG>2.0.ZU;2-M
Abstract
H3PO4, NaOH, and KOH solutions are found to be useful for removing nit rogen depleted layers or damage induced by high temperature annealing or dry etching of metalorganic chemical vapor deposition-grown (0001)G aN/Al2O3. Solutions are selective to the (0001)plane of GaN. However, certain flat planes etched without etch pits are exposed by wet etchin g.