USE OF CL-2-DISCHARGE CONDITIONS(AR MIXTURES IN ETCHING SILICON ON THE CATHODE UNDER DC GLOW)

Authors
OVCHINNIKOV NL SVETTSOV VI EFREMOV AM
Citation
Nl. Ovchinnikov et al., USE OF CL-2-DISCHARGE CONDITIONS(AR MIXTURES IN ETCHING SILICON ON THE CATHODE UNDER DC GLOW), Inorganic materials, 34(5), 1998, pp. 417-418
Citations number
5
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
34
Issue
5
Year of publication
1998
Pages
417 - 418
Database
ISI
SICI code
0020-1685(1998)34:5<417:UOCCMI>2.0.ZU;2-2
Abstract
Dry etching of silicon was studied in chlorine + argon mixtures under de glow-discharge conditions, with the sample to be etched placed on t he cathode. The etching rate depends on the composition of the plasma gas and peaks at 40 vol % Ar.