S. Biesemans et al., PRACTICAL ACCURACY ANALYSIS OF SOME EXISTING EFFECTIVE CHANNEL-LENGTHAND SERIES RESISTANCE EXTRACTION METHODS FOR MOSFETS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1310-1316
A method to analyze the accuracy of the extracted values for the chann
el length (L-eff) and series resistance (R-s) of MOSFET devices is pre
sented. The analysis is based on a statistical argument being the vari
ance a of the extracted results. This variance is found to be a good m
easure for the accuracy of the particular extraction method used. It i
s shown that, in the case of deep submicron technologies, errors as la
rge as 200 nm for Delta L can be made for these extraction methods dep
ending on the process design and the process control. The use of a sin
gle transistor method is suggested as a possible solution to the low a
ccuracy of the L-array methods.