PRACTICAL ACCURACY ANALYSIS OF SOME EXISTING EFFECTIVE CHANNEL-LENGTHAND SERIES RESISTANCE EXTRACTION METHODS FOR MOSFETS

A method to analyze the accuracy of the extracted values for the chann el length (L-eff) and series resistance (R-s) of MOSFET devices is pre sented. The analysis is based on a statistical argument being the vari ance a of the extracted results. This variance is found to be a good m easure for the accuracy of the particular extraction method used. It i s shown that, in the case of deep submicron technologies, errors as la rge as 200 nm for Delta L can be made for these extraction methods dep ending on the process design and the process control. The use of a sin gle transistor method is suggested as a possible solution to the low a ccuracy of the L-array methods.